Carbon distribution in silicon ribbons grown by FFG and cast
Abstract
The concentration and variation of carbon as impurity in silicon ribbons were determined by FTIR spectrospcopy. Results indicate that the carbon concentration across the width of a ribbon is a minimum at the centre and a maximum at the edges of a ribbon.
- Publication:
-
Infrared Physics
- Pub Date:
- July 1986
- DOI:
- 10.1016/0020-0891(86)90076-X
- Bibcode:
- 1986InfPh..26..243E
- Keywords:
-
- Carbon;
- Crystal Growth;
- Silicon;
- Impurities;
- Infrared Spectroscopy;
- Oxygen;
- Ribbons;
- Solid-State Physics