Charge transport by the ion shunt effect

The ion track shunt effect is an important factor in determining the upset sensitivity of some memories and logic devices under certain operating conditions. In this paper, information on the functional dependence of this effect on such parameters as the bias voltages applied to the junctions, the ionization density of the ion track, and the angle of incidence of the ion. Measurements performed for H, He, Be, C, O, S, Cu, and Br, ions incident on three types of structures typical of several CMOS processes used for device fabrication are reported, and the results are used to evaluate a previously proposed model for the ion track shunt effect.