Radiation-hardened JFET devices and CMOS circuits fabricated in SOI films
Abstract
The effects of total-dose radiation have been investigated for the first complementary JFETs fabricated in zone-melting-recrystallized (ZMR) Si films on SiO2-coated Si substrates. With a -5 V bias applied to the Si substrate during irradiation, and device operation, both n- and p-channel devices show low threshold-voltage shift, low leakage currents and small transconductance degradation for total doses up to 10 to the 8th rad(Si). Fully functional CMOS 1K static RAMs and 1.2 K gate arrays have been fabricated in both ZMR and oxygen-implanted (SIMOX) SOI films. The ZMR circuits are superior in speed performance to the SIMOX circuits because parasitics are smaller for the ZMR structure. Excellent transient-radiation hardness has been demonstrated for both ZMR and SIMOx SRAMs, which showed no logic upset for dose rates up to 7 x 10 to the 10th rad(Si)/s.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1986
- DOI:
- 10.1109/TNS.1986.4334607
- Bibcode:
- 1986ITNS...33.1372T
- Keywords:
-
- Cmos;
- Jfet;
- Radiation Hardening;
- Random Access Memory;
- Silicon Films;
- Soi (Semiconductors);
- Radiation Dosage;
- Threshold Voltage;
- Transconductance;
- Volt-Ampere Characteristics;
- Zone Melting;
- Electronics and Electrical Engineering