GaAs ultra-high-frequency dividers with advanced SAINT FET's
Abstract
The circuit design, fabrication, and performance of ultrahigh-frequency dividers with buffer FET logic circuits are described. Using air-bridge technology and a new self-aligned-gate GaAs FET process, called 'advanced SAINT', which avoids excess gate metal overlap on the dielectric film, 10.6-GHz operation at 258 mW is achieved. This performance is made possible by a reduction of gate and interconnection parasitic capacitance. Furthermore, the possibility of operation above 20 GHz for GaAs MESFET frequency dividers is predicted on the basis of circuit optimization and FET improvements including parasitic capacitance reduction and transconductance enhancement.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1986
- DOI:
- 10.1109/T-ED.1986.22868
- Bibcode:
- 1986ITED...33.2059O
- Keywords:
-
- Field Effect Transistors;
- Frequency Dividers;
- Gallium Arsenides;
- Ultrahigh Frequencies;
- Capacitance;
- Fabrication;
- Network Synthesis;
- Transconductance;
- Waveforms;
- Electronics and Electrical Engineering