IMPACT - A point-defect-based two-dimensional process simulator: modeling the lateral oxidation-enhanced diffusion of dopants in silicon
Abstract
This paper presents a point-defect-based two-dimensional process simulator, the Isen modeling package for integrated circuits technology (IMPACT). IMPACT simulates both dopant and interstitial redistribution during the usual IC fabrication steps. Based upon Hu's (1974 and 1983) model, a study has been made on the interstitial kinetics, and two-dimensional oxidation-enhanced diffusion has been investigated. A complete set of model parameters is given for dry oxidation in 100-line silicon. A good agreement is obtained for a wide range of experiments: time-dependent excess self-interstitial concentration deduced from stacking fault length measurements, one-dimensional and two-dimensional oxidation-enhanced diffusion, and diffusivity enhancement due to backside oxidations.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1986
- DOI:
- 10.1109/T-ED.1986.22694
- Bibcode:
- 1986ITED...33.1454C
- Keywords:
-
- Computer Aided Design;
- Doped Crystals;
- Integrated Circuits;
- Oxidation;
- Particle Diffusion;
- Point Defects;
- Silicon;
- Two Dimensional Models;
- Computational Grids;
- Diffusivity;
- Metal Oxide Semiconductors;
- Phosphorus;
- Recombination Coefficient;
- Solid-State Physics