Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
Abstract
Recent results are presented on quantum well heterostructure tunneling physics and novel device applications for this phenomenon. It is noted that the ratio of the intrinsic resonance width to the total scattering width determines which of the two mechanisms controls resonant tunneling. A remarkable analogy has been found between sequential resonant tunneling in superlattices and paramagnetic spin resonance; tunable IR semiconductor lasers and wavelength-selective detectors based on this effect are discussed.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- September 1986
- DOI:
- 10.1109/JQE.1986.1073171
- Bibcode:
- 1986IJQE...22.1853C
- Keywords:
-
- Barrier Layers;
- Carrier Transport (Solid State);
- Electron Tunneling;
- Heterojunctions;
- Quantum Wells;
- Resonant Tunneling;
- Superlattices;
- Energy Bands;
- Negative Resistance Devices;
- Photoconductors;
- Spectral Sensitivity;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering