Switching of photoluminescence by pulsed electric field in GaAs/Al(0.7)Ga(0.3)As single quantum well structure
Abstract
The field-dependence of the recombination lifetime of carriers is clarified by means of transient photoluminescence measurements for pulsed electric fields on a GaAs/AlGaAs quantum well structure at liquid nitrogen temperatures; in addition, fast switching of the luminescence intensities is demonstrated. The results obtained are semiquantitatively interpreted in terms of the field-induced reduction in the overlap between electron and hole wave functions inside the GaAs well, in combination with a bimolecular recombination model.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- September 1986
- DOI:
- 10.1109/JQE.1986.1073173
- Bibcode:
- 1986IJQE...22.1837K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electric Pulses;
- Gallium Arsenides;
- Optical Switching;
- Photoluminescence;
- Quantum Wells;
- Decay Rates;
- Oscillator Strengths;
- Recombination Reactions;
- Transient Response;
- Volt-Ampere Characteristics;
- Wave Functions;
- Electronics and Electrical Engineering