Inelastic light scattering by electronic excitations in semiconductor heterostructures
Abstract
In recent years there has been much research on inelastic light scattering by quasi-two-dimensional electron systems in quantum wells and heterostructures. In this paper, a general description of resonant inelastic light scattering is presented as a spectroscopic method that reveals single particle and collective behavior of electrons and holes in semiconductor microstructures. High-mobility two-dimensional free carrier systems in modulation-doped GaAs-(AlGa)As heterostructures, purely space-charge induced quantum wells of GaAs and shallow impurities in GaAs-(AlGa)As quantum wells, are considered.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- September 1986
- DOI:
- 10.1109/JQE.1986.1073168
- Bibcode:
- 1986IJQE...22.1771A
- Keywords:
-
- Elementary Excitations;
- Heterojunctions;
- Inelastic Scattering;
- Light Scattering;
- Semiconductors (Materials);
- Acceptor Materials;
- Backscattering;
- Band Structure Of Solids;
- Donor Materials;
- Electron Spectroscopy;
- Energy Levels;
- Plasma Oscillations;
- Polarization Characteristics;
- Raman Spectra;
- Resonance;
- Valence;
- Solid-State Physics