Investigation of parallel conduction in GaAs/Al(x)Ga(1-x)As modulation-doped structures in the quantum limit
Abstract
A detailed study of the transport in GaAs/Al(x)Ga(1-x)As modulation-doped structures in the low field and high magnetic field quantum limit, for varying amounts of parallel conduction in the AlGaAs region, is presented; the apparent breakdown of quantum Hall effect behavior due to low mobility carriers in the parallel channel is observed. The onset of conduction through the parallel channel by quantum transport measurements has been observed, along with a nonlinear dose dependence due to photoexcitation.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- September 1986
- DOI:
- 10.1109/JQE.1986.1073155
- Bibcode:
- 1986IJQE...22.1753R
- Keywords:
-
- Aluminum Gallium Arsenides;
- Carrier Transport (Solid State);
- Conduction Electrons;
- Gallium Arsenides;
- Carrier Density (Solid State);
- Electrical Resistance;
- Hall Effect;
- Magnetoresistivity;
- Quantum Wells;
- Solid-State Physics