The superiority of optoelectronic integration for high-speed laser diode modulation

This paper compares the optoelectronic monolithic integration and hybrid integration of a laser diode and a metal semiconductor field effect transistor with particular emphasis on high-speed laser diode modulation. A simulation program with integrated circuit emphasis (SPICE) was used to evaluate high-speed responses. Waveforms of 6.3 Gb/s sequential pulses were greatly degraded by the existence of a small inductance of 0.3 nH which is caused by an interconnecting wire of 0.5 mm length used for hybrid integration. On the other hand, in the case of monolithic integration, waveform degradation was hardly observed at the same bit rate.