Frequency and intensity noise in injection-locked semiconductor lasers - Theory and experiments

The spontaneous emission processes of master and slave lasers are taken into account in the present analytical expressions for the power spectral densities of intensity and frequency noise in single-mode semiconductor lasers operating in the injection-locking regime. Attention is given to the coincidence of the very low frequency part of the slave's frequency noise with that of the master, within a certain frequency region whose range increases as the value of the injected signal increases. The way in which experimental results are accounted for by the present theory is detailed.