Far-infrared detection by GaAs-IREDs and GaAs0.6P0.4-LEDs
Abstract
In GaAs-IREDs and GaAs0.6P0.4-LEDs a photoconductive and a bolometric FIR response has been observed at low temperatures by applying different pulsed optically pumped FIR lasers. The short circuit current responsivity peaks at λ=400 μm being about 1.5 mA/W. By monitoring the rapid modulation of the FIR radiation due to mode beating of the pump laser, an upper limit of 1 ns was established to the time constant of the photoconductive signal.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- September 1986
- DOI:
- Bibcode:
- 1986IJIMW...7.1297B
- Keywords:
-
- Far Infrared Radiation;
- Gallium Arsenides;
- Gallium Phosphides;
- Infrared Detectors;
- Light Emitting Diodes;
- Photoconductivity;
- Spectral Sensitivity;
- Temperature Effects;
- Temporal Resolution;
- Transient Response;
- Electronics and Electrical Engineering;
- FIR detection;
- light emitting diodes;
- response time