A 44 GHz HEMT amplifier
Abstract
A 44-GHz amplifier using 0.25-μm gate length and double-heterojunction structure HEMT devices is described. Higher gain and power performance have been obtained from the amplifier using this device at millimeter-wave frequencies. A spot gain of 9.4 dB and a 1-dB gain compression point of +7.5 dBm has been achieved at 43.5 GHz.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- July 1986
- DOI:
- 10.1007/BF01026688
- Bibcode:
- 1986IJIMW...7..999H
- Keywords:
-
- Amplifier Design;
- Heterojunction Devices;
- High Electron Mobility Transistors;
- Microwave Amplifiers;
- Gates (Circuits);
- Millimeter Waves;
- Power Gain;
- Electronics and Electrical Engineering