CW IMPATTs made from silicon molecular beam epitaxy material
Abstract
CW-IMPATT diodes for W-band operation are fabricated from Silicon Molecular Beam Epitaxy material. Using different preparation techniques, the active layer of single drift structures is grown at 750 °C and 550 °C. Doping is performed by molecular beams from Sb (n-type) or Ga (p-type) effusion cells. The influence of the p+-doping level on the series resistance of the diode is investigated. Measurements of efficiency as a function of the active region data deliver fine design rules. The output power is 450 mW at 87 GHz from diodes mounted in a hermetically sealed package on a diamond heat sink.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- March 1986
- DOI:
- Bibcode:
- 1986IJIMW...7..305L
- Keywords:
-
- Avalanche Diodes;
- Doped Crystals;
- Molecular Beam Epitaxy;
- N-Type Semiconductors;
- Silicon;
- Current Density;
- Fabrication;
- Electronics and Electrical Engineering;
- Silicon;
- Output Power;
- Active Region;
- Active Layer;
- Molecular Beam