MOS VLSI reliability and yield trends
Abstract
Trends in yield and reliability of new technologies for MOS devices both drive and are a consequence of at least six major, highly interactive technology trends - tending toward (1) more complex device structures and materials, (2) reduced device dimensions and feature sizes, (3) larger wafer sizes, (4) factory automation, (5) higher pin count packages and larger die sizes, and (6) increasingly sophisticated CAD tools. Technology decisions now often involve trading off one reliabilty failure mechanism for another. The implications are that the dominant reliability mechanisms may change in the future, and wearout will start to impinge on reliability life.
- Publication:
-
IEEE Proceedings
- Pub Date:
- December 1986
- Bibcode:
- 1986IEEEP..74.1715W
- Keywords:
-
- Circuit Reliability;
- Metal Oxide Semiconductors;
- Technology Assessment;
- Trends;
- Very Large Scale Integration;
- Electrical Faults;
- Hot Electrons;
- Oxide Films;
- Radiation Hardening;
- Scaling;
- Yield;
- Electronics and Electrical Engineering