GaAs/AlGaAs heterojunction MISFET's having 1-W/mm power density at 18.5 GHz
Abstract
The previously reported GaAs/AlGaAs heterojunction MISFET with an undoped AlGaAs layer as an insulator has been further optimized for power operation at upper Ku band. A 300-micron gate-width device generated 320 mW of output power with 33 percent efficiency at 18.5 GHz. The corresponding power density exceeds 1 W/mm. When optimized for efficiency, the device has achieved a power added efficiency of 43 percent at 19 GHz.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1986
- Bibcode:
- 1986IEDL....7..638K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Heterojunctions;
- Microwave Circuits;
- Mis (Semiconductors);
- Volt-Ampere Characteristics;
- Electrical Faults;
- Gallium Arsenides;
- Millimeter Waves;
- Electronics and Electrical Engineering