Al-Ge ohmic contacts to n-type GaAs
Abstract
Ohmic contacts have been fabricated to n-type GaAs with an alloy of Al-Ge which has an eutectic temperature of 424 C with 53-weight percent germanium. The lowest contact resistance of 1.4 x 10 to the -6th ohm sq cm was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1986
- DOI:
- Bibcode:
- 1986IEDL....7..603Z
- Keywords:
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- Aluminum Alloys;
- Contact Resistance;
- Gallium Arsenides;
- Germanium Alloys;
- Integrated Circuits;
- N-Type Semiconductors;
- Czochralski Method;
- Ion Implantation;
- Thermal Stability;
- Threshold Voltage;
- Transconductance;
- Electronics and Electrical Engineering