A source-side injection erasable programmable read-only-memory (SI-EPROM) device
Abstract
A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source. At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM has shown 10-microsec programming speed at a drain voltage of 5 V.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1986
- DOI:
- 10.1109/EDL.1986.26465
- Bibcode:
- 1986IEDL....7..540W
- Keywords:
-
- Carrier Injection;
- Chips (Memory Devices);
- Hot Electrons;
- Microprogramming;
- Read-Only Memory Devices;
- Electric Fields;
- Field Effect Transistors;
- Gates (Circuits);
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering