Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy
Abstract
The first double-heterojunction In(53)Ga(28)Al(19)As/In(53)Ga(47)As bipolar transistors grown by molecular beam epitaxy on semiinsulating substrates were fabricated and characterized. A comparison between three types of structures is presented: ones with two abrupt heterojunctions; ones with a thin small bandgap n-type layer (spacer) at the collector junction; and ones with two spacers. The use of the small bandgap spacer permits an increase in the collector efficiency while decreasing the recombination current in the emitter-base junction. The best devices of the third type (two spacers) exhibit a current gain up to 300 and an offset voltage of only 70 mV.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1986
- DOI:
- 10.1109/EDL.1986.26457
- Bibcode:
- 1986IEDL....7..516P
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Energy Bands;
- Spacers;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering