Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's
Abstract
Fully monolithic integration of interconnected GaAs/AlGaAs double-heterostructure LEDs and Si MOSFETs is demonstrated for the first time. The Si MOSFETs, with a gate length of 5 microns and gate width of 1.6 mm, have almost the same characteristics as those of control devices fabricated on a separate Si wafer. The LED output collected by a microscope lens with a numerical aperture of 0.65 is about 6.5 micro_W at 100-mA dc current. LED modulation rates up to 27 Mbit/s have been achieved by applying a stream of voltage pulses to the MOSFET gate. The modulation rate is limited by the speed of the MOSFET.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1986
- DOI:
- 10.1109/EDL.1986.26452
- Bibcode:
- 1986IEDL....7..500C
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Integrated Circuits;
- Light Emitting Diodes;
- Metal Oxide Semiconductors;
- Silicon;
- Modulation;
- Photomicrography;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering