Induced base transistor fabricated by molecular beam epitaxy
Abstract
A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy. Two-dimensional electron gas induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain alpha has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1986
- DOI:
- 10.1109/EDL.1986.26451
- Bibcode:
- 1986IEDL....7..497C
- Keywords:
-
- Fabrication;
- Molecular Beam Epitaxy;
- Semiconductor Devices;
- Transistors;
- Electrical Resistance;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering