Experimental 3C-SiC MOSFET
Abstract
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid SiC film.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1986
- DOI:
- 10.1109/EDL.1986.26417
- Bibcode:
- 1986IEDL....7..404K
- Keywords:
-
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Silicon Carbides;
- Silicon Films;
- Capacitance-Voltage Characteristics;
- Epitaxy;
- Static Characteristics;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering