Inversion-mode GaInAs MISFET ring oscillators
Abstract
Inversion mode, self-aligned-gate, metal-insulator-semiconductor field-effect transistors (MISFET's) have been fabricated on p-type Ga(0.47)-In(0.53)As epitaxially grown on semi-insulating InP substrates. Ring-oscillator circuits were designed using enhancement-driver/enhancement-load-type logic gates. Propagation delay as low as 50 ps was measured in a nine-stage ring oscillator (driver MISFET about 1.2-micron gate length) with a fan-in and fan-out of one. These are believed to be the first results on GaInAs inversion-mode MISFET-based digital integrated circuits.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- June 1986
- DOI:
- Bibcode:
- 1986IEDL....7..390U
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Microwave Oscillators;
- Mis (Semiconductors);
- Gates (Circuits);
- Integrated Circuits;
- Large Scale Integration;
- Mode Transformers;
- Ring Structures;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering