Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET's
Abstract
Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET's up to a total dose of 5 x 10 to the 7th rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 x 10 to the 5th rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive direction at higher doses. The mobility factor decreases very slightly and then increases with increasing dose.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- June 1986
- DOI:
- Bibcode:
- 1986IEDL....7..377G
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Ionizing Radiation;
- Mis (Semiconductors);
- N-Type Semiconductors;
- Irradiation;
- Microwave Equipment;
- Threshold Voltage;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering