Low-resistance ohmic contacts to AlGaAs/GaAs and In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As modulation-doped structures obtained by halogen lamp annealing
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1986
- Bibcode:
- 1986IEDL....7..320H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Contact Resistance;
- Electric Contacts;
- Field Effect Transistors;
- Heterojunction Devices;
- Luminaires;
- Annealing;
- Doped Crystals;
- Electrical Properties;
- Electron Beams;
- Halogens;
- Indium Arsenides;
- Metallizing;
- Titanium;
- Electronics and Electrical Engineering