InP-metal barrier junctions with improved I-V characteristics
Abstract
A new contact for FET gate deposition, whose technology is similar to that for MESFETs, is demonstrated in InP. A significant reduction in reverse leakage current is measured, achieving J(R) = 0.003 A/sq cm at 300 K at -2 V and an improved forward turn-on voltage, enhanced from 0.25 to 1.0 V at 300 K compared to conventional Schottky barriers on InP. This barrier is used to form the gate of n-channel FETs in InP.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1986
- DOI:
- 10.1109/EDL.1986.26386
- Bibcode:
- 1986IEDL....7..317P
- Keywords:
-
- Field Effect Transistors;
- Gates (Circuits);
- Indium Phosphides;
- Msm (Semiconductors);
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Annealing;
- Electric Contacts;
- Metallizing;
- N-Type Semiconductors;
- Electronics and Electrical Engineering