Noise temperature and diffusion coefficient associated with the quasi-two-dimensional electron gas in an ungated MODFET structure
Abstract
The ac noise temperature and diffusion coefficient of the quasi-two-dimensional electron gas in an ungated AlGaAs/GaAs MODFET structure were measured as a function of electric field at T = 300 K. Noise temperature data can be used in the modeling of MODFET noise behavior. The diffusion coefficient of the two-dimensional (2-D) electron gas is found to be less field dependent than that of bulk GaAs.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1986
- DOI:
- Bibcode:
- 1986IEDL....7..294W
- Keywords:
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- Carrier Transport (Solid State);
- Diffusion Coefficient;
- Electron Gas;
- Field Effect Transistors;
- Heterojunction Devices;
- Noise Temperature;
- Aluminum Gallium Arsenides;
- Doped Crystals;
- Electric Field Strength;
- Electron Mobility;
- Noise Measurement;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering