Integrated multisensor chip
Abstract
A multipurpose integrated-sensor chip has been fabricated for the simultaneous measurement of physical and chemical variables. The multipurpose chip, which measures 8 x 9 sq mm, contains conventional MOS devices for signal conditioning, array accession, and output buffering along with the following on-chip sensors: a gas-flow sensor, an infrared-sensing array, a chemical-reaction sensor, cantilever-beam accelerometers, surface-acoustic-wave vapor sensors, a tactile sensors array, and an infrared charge-coupled device imager. The multisensing functions of this chip utilize both the pyroelectric and piezoelectric effects in ZnO thin films. Fabrication of the chip is carried out using conventional 3-micron Si NMOS process combined with Si micromachining techniques. Compatible fabrication technology and sensor properties are described.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1986
- DOI:
- 10.1109/EDL.1986.26363
- Bibcode:
- 1986IEDL....7..254P
- Keywords:
-
- Charge Coupled Devices;
- Chips (Electronics);
- Metal Oxide Semiconductors;
- Multisensor Applications;
- Sensors;
- Surface Acoustic Wave Devices;
- Accelerometers;
- Anemometers;
- Integrated Circuits;
- Piezoelectric Gages;
- Radiation Detectors;
- Tactile Sensors (Robotics);
- Electronics and Electrical Engineering