Heterojunction bipolar transistors with ion-implanted bases
Abstract
Emitter-up configuration heterojunction bipolar transistors (HBTs) fabricated with Zn ion-implanted bases have yielded dc gains of up to 100. This process, in which Zn(+) ions are implanted into a metal organic vapor-deposited GaAs collector epilayer to produce a thin, highly doped base region, could be extended to achieve a fully planar high frequency HTB process for high density ICs.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1986
- DOI:
- 10.1109/EDL.1986.26346
- Bibcode:
- 1986IEDL....7..203T
- Keywords:
-
- Bipolar Transistors;
- Heterojunction Devices;
- Integrated Circuits;
- Ion Implantation;
- Amplification;
- Annealing;
- Fabrication;
- Gallium Arsenides;
- Volt-Ampere Characteristics;
- Zinc;
- Electronics and Electrical Engineering