44-GHz monolithic GaAs FET amplifier
Abstract
Millimeter-wave monolithic GaAs FET amplifiers have been developed. These amplifiers were fabricated using FET's with MBE-grown active layers and electron-beam defined sub-half-micrometer gates. Source groundings are provided through very low inductance via holes. The single-stage amplifier has achieved over a 10-dB gain at 44 GHz. A 300-micron gate-width amplifier has achieved an output power of 60 mW with a power density of 0.2 W per millimeter of gate width.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- February 1986
- DOI:
- 10.1109/EDL.1986.26306
- Bibcode:
- 1986IEDL....7...95K
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Amplifiers;
- Millimeter Waves;
- Transistor Amplifiers;
- Amplifier Design;
- Gates (Circuits);
- Molecular Beam Epitaxy;
- Power Gain;
- Electronics and Electrical Engineering