Low-temperature fabrication of MOSFET's utilizing a microwave-excited plasma oxidation technique
Abstract
A microwave-excited plasma oxidation technique is applied to gate oxide formation of MOSFET's and subsequent processes are carried out essentially at temperatures below 600 C. These MOSFET's compare favorably with conventional ones fabricated by using a high-temperature processes in terms of field-effect mobility and subthreshold characteristics.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 1986
- DOI:
- 10.1109/EDL.1986.26284
- Bibcode:
- 1986IEDL....7...38K
- Keywords:
-
- Fabrication;
- Field Effect Transistors;
- Oxides;
- Plasmas (Physics);
- Low Temperature;
- Silicon Dioxide;
- Thin Films;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering