Collector-up HBT's fabricated by Be(+) and O(+) ion implantations
Abstract
A novel collector-up (C-up) GaAs/AlGaAs heterojunction bipolar transistor (HBT) has been developed and initial device results presented. This device has its extrinsic base defined by Be(+) and O(+) implantations. The combination of Be(+)/O(+) implantations and heat-pulse annealing is leading to a considerable reduction in the parasitic current and capacitance in the extrinsic base region. Improved device structure and performance expected from this device are discussed in detail.
- Publication:
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IEEE Electron Device Letters
- Pub Date:
- January 1986
- DOI:
- Bibcode:
- 1986IEDL....7...32A
- Keywords:
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- Bipolar Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Ion Implantation;
- Aluminum Gallium Arsenides;
- Annealing;
- Beryllium;
- Molecular Beam Epitaxy;
- Oxygen;
- Electronics and Electrical Engineering