GaAs materials for monolithic microwave integrated circuits

Ion implantation and epitaxial procedures for the fabrication of materials appliable to monolithic microwave ICs are described. The uses of the horizontal Bridgeman technique, liquid encapsulated Czochralski bulk GaAs growth, and epitaxial GaAs grown on Si for the production of the bulk single crystal wafers needed for ion implantation and epitaxial over-growth are discussed. It is noted that each active layer preparation technique is applicable to specific single ICs where only one type of active device is involved; however, for more complex circuits with different active device functions a combination of ion implantation and an epitaxial technique is required.