Improvement in AlGaAs/GaAs HBT power gains with buried proton-implanted layer
Abstract
A new structure for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) that employs a buried proton-implanted external collector layer is proposed. This structure has been successfully used to achieve high-performance HBTs with maximum oscillation frequencies up to 51 GHz for a device with 2 x 5-micron emitter and 4 x 7-micron collector dimensions.
- Publication:
-
Electronics Letters
- Pub Date:
- December 1986
- DOI:
- 10.1049/el:19860903
- Bibcode:
- 1986ElL....22.1317N
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Logic Circuits;
- Molecular Beam Epitaxy;
- Power Gain;
- Volt-Ampere Characteristics;
- Electric Current;
- Gallium Arsenides;
- Heterojunctions;
- Electronics and Electrical Engineering