Indium tin oxide/GaAs photodiodes for millimetric-wave applications
Abstract
In the letter the authors describe improved ITO/GaAs photodiodes for very high-speed applications. For the first time a GaAs device is reported which combines a millimetric wavelength response with a -3 dB bandwidth of 50 GHz or higher (10 ps FWHM), with a high quantum efficiency in excess of 30 percent at 820 nm.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1986
- DOI:
- Bibcode:
- 1986ElL....22.1266P
- Keywords:
-
- Gallium Arsenides;
- Ito (Semiconductors);
- Millimeter Waves;
- Optoelectronic Devices;
- Photodiodes;
- Microwave Equipment;
- Quantum Efficiency;
- Electronics and Electrical Engineering