Quantum-well-doped FET (QUD-FET)
Abstract
A novel FET using a 2DEG is presented. The FET has an AlAs/GaAs/AlAs single quantum well with planar doping in the center of the GaAs layer. The conduction channels are composed of a 2DEG generated in undoped GaAs layers outside the well. The measured 2DEG concentration was 1.8-2 x 10 to the 12th/sq cm with electron mobilities of 3500 sq cm/V s at RT and 10,500 sq cm/V s at 77 K. A 1.5 micron-gate-length FET exhibits a maximum transconductance of 174 mS/mm and a maximum current exceeding 300 mA/mm at 77 K.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1986
- DOI:
- Bibcode:
- 1986ElL....22.1240H
- Keywords:
-
- Doped Crystals;
- Field Effect Transistors;
- High Electron Mobility Transistors;
- Quantum Wells;
- Electron Density (Concentration);
- Electron Gas;
- Gallium Arsenides;
- Transconductance;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering