Cathodic Polarization Phenomena of Perovskite Oxide Electrodes with Stabilized Zirconia
Abstract
The paper reports measurements of the noise temperatrure of small-signal, low-noise X-band GaAs MESFET amplifiers from room temperature down to 2 K, at offset frequencies of several hundred hertz from the carrier and for input carrier powers from -40 to -20 dBm. A dramatic increase in the level of flicker noise is observed as these devices are cooled to liquid helium temperatures, in marked contrast to the normally observed decrease in noise temperature of an unsaturated GaAs MESFET amplifier as it is cooled.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1986
- DOI:
- Bibcode:
- 1986ElL....22.1037M
- Keywords:
-
- Cryogenic Cooling;
- Field Effect Transistors;
- Flicker;
- Gallium Arsenides;
- Microwave Amplifiers;
- Noise Temperature;
- Extrapolation;
- Liquid Helium;
- Low Noise;
- Electronics and Electrical Engineering