New double heterostructure optoelectronic triangular barrier switch (OETBS)
Abstract
A new high-speed, high-power optoelectronic device with a double heterostructure is proposed and demonstrated. The device has bistable electrical characteristics where light emission occurs in the on-state. The high optical power output was measured to be 209 micro-W at 100 mA. The transient electrical and optical rise times have been measured to be 500 ps and 1 ns, respectively.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1986
- DOI:
- 10.1049/el:19860649
- Bibcode:
- 1986ElL....22..952M
- Keywords:
-
- Bistable Circuits;
- Electro-Optics;
- Heterojunctions;
- Molecular Beam Epitaxy;
- Optical Switching;
- Gallium Arsenides;
- Optoelectronic Devices;
- Substrates;
- Electronics and Electrical Engineering