Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetector
Abstract
Preliminary measurements of the photoresponse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice are presented. Very low reverse-bias dark currents (less than 6 x 10 to the -8th A/sq cm at 3 V) are measured, while still retaining the speed and spectral response of a conventional GaAs PIN diode. The -3 dB bandwidth is found to be greater than 1 GHz, and the responsivity is 0.1 A/W.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1986
- DOI:
- Bibcode:
- 1986ElL....22..636C
- Keywords:
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- Aluminum Arsenides;
- Gallium Arsenides;
- P-I-N Junctions;
- Photodiodes;
- Superlattices;
- Electric Current;
- Field Effect Transistors;
- Signal To Noise Ratios;
- Electronics and Electrical Engineering