Ka-band monolithic gain control amplifier
Abstract
A monolithic gain control amplifier for Ka-band has been developed based on 0.25 micron-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1986
- DOI:
- 10.1049/el:19860341
- Bibcode:
- 1986ElL....22..503G
- Keywords:
-
- Amplifier Design;
- Extremely High Frequencies;
- Integrated Circuits;
- Power Gain;
- Fabrication;
- Field Effect Transistors;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering