High-speed response characteristics of GaAs optoelectronic integrated receivers
Abstract
The paper focuses on the measurement of pulse response characteristics of an optoelectronic integrated receiver in which a GaAs metal-semiconductor-metal (MSM) photodiode and a GaAs field-effect transistor amplifier are monolithically integrated on a GaAs substrate. The maximum parasitic capacitance was found to be negligible for the total capacitance at the amplifier input. A fast response of this receiver showing a rise time of 300 ps was verified.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1986
- DOI:
- 10.1049/el:19860340
- Bibcode:
- 1986ElL....22..501H
- Keywords:
-
- Electro-Optics;
- Gallium Arsenides;
- Integrated Circuits;
- Msm (Semiconductors);
- Receivers;
- Transistor Amplifiers;
- Capacitance;
- Circuit Diagrams;
- Field Effect Transistors;
- Waveforms;
- Electronics and Electrical Engineering