Low-noise microwave HIFET fabricated using photolithography and MOCVD
Abstract
Low-noise HIFETs with AlGaAs/GaAs heterostructures have been developed using MOCVD and optical photolithography. HIFETs with less than 0.5 micron-long and 200 micron-wide gates show a noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz, and a dc transconductance of 280 mS/mm.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1986
- DOI:
- 10.1049/el:19860331
- Bibcode:
- 1986ElL....22..487T
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunctions;
- Organometallic Compounds;
- Photolithography;
- Current Distribution;
- Fabrication;
- Low Noise;
- Power Gain;
- Vapor Deposition;
- Electronics and Electrical Engineering