11 W quasi-CW monolithic laser diode arrays
Abstract
An optical power of 11 W from one facet has been obtained from a 1 cm integrated GaAlAs laser array for 150 micron pulse widths (quasi-CW operation). The array consists of 20 tenstripe lasers spaced along the bar, employing about 20 percent of the facet length for active laser emission.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1986
- DOI:
- 10.1049/el:19860159
- Bibcode:
- 1986ElL....22..231H
- Keywords:
-
- Aluminum Gallium Arsenides;
- High Power Lasers;
- Integrated Optics;
- Laser Outputs;
- Semiconductor Lasers;
- Arrays;
- Laser Pumping;
- Pulsed Lasers;
- Quantum Wells;
- Semiconductor Diodes;
- Soldering;
- Lasers and Masers