Single-drift flat-profile GaAs IMPATT diodes at 90 GHz
Abstract
GaAs IMPATT diodes were fabricated for the 90 GHz range using the single-drift-region structure with flat doping profile. The diodes were fabricated from molecular-beam-epitaxial material and mounted on diamond heat sinks. A highest output power of 240 mW with 4.1 percent efficiency at 89.6 GHz was achieved.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1986
- DOI:
- 10.1049/el:19860156
- Bibcode:
- 1986ElL....22..224E
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- Heat Sinks;
- Microwave Equipment;
- Diamonds;
- Microwave Oscillators;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering