High-detectivity InAs0.85Sb0.15/InAs infra-red (1.8-4.8 micron) detectors
Abstract
High-detectivity InAsSb pn-junction detectors were grown directly on InAs substrates using liquid phase epitaxial (LPE) techniques. This type of material is of interest because the bandgap of InAsSb can be tailored over a wide spectral range for optoelectronic devices, including wavelengths exceeding 2 microns. Two-phase melts with excess InAs were used when growing the pn junction by cooling at 1 C/min starting from 525 C on a (100)-oriented InAs substrate. The process resulted in a lattice mismatch, and lasing was obtained at 3.95 microns at 80 K, away from the luminescence peak of the InAsSb layer. A peak quantum efficiency of 40 percent was measured, with significant response persisting beyond 4 microns. The response magnitude was superior to InSb detectors at the 3.5 micron level. It is concluded that the devices have superior detectivities even in the presence of the lattice mismatch with the substrate.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1986
- DOI:
- 10.1049/el:19860150
- Bibcode:
- 1986ElL....22..215M
- Keywords:
-
- Indium Antimonides;
- Indium Arsenides;
- Infrared Detectors;
- Liquid Phase Epitaxy;
- P-N Junctions;
- Semiconductor Devices;
- Energy Gaps (Solid State);
- Mismatch (Electrical);
- Optoelectronic Devices;
- Photoluminescent Bands;
- Quantum Efficiency;
- Optics