Electrical characterisation of epitaxially overgrown Si in Si(111-plane)/CoSi2/Si metal base transistor
Abstract
Epitaxial Si(111-plane)/CoSi2/Si heterostructures have been grown using molecular beam epitaxy (MBE) apparatus with the overgrown Si layer doped by Sb coevaporation. Electrical characteristics of the top CoSi2/Si epitaxial Schottky barriers are presented. Current/voltage, capacitance/voltage characteristics and deep level transient spectra show that the overgrown Si material is deviceworthy. Furthermore, transconductance measurements between the emitter and collector of the metal base transistor (MBT) indicate that the high Si quality is obtained with a negligible pinhole density in the base. Measurements of the current gain in the MBT confirm a value of the CoSi2 ballistic mean free path of 70-110 A.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1986
- DOI:
- 10.1049/el:19860145
- Bibcode:
- 1986ElL....22..207D
- Keywords:
-
- Electrical Properties;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- Schottky Diodes;
- Silicon Transistors;
- Capacitance-Voltage Characteristics;
- Carrier Transport (Solid State);
- Cobalt Compounds;
- Doped Crystals;
- Transconductance;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering