Equivalent circuit and ECL ring oscillators of graded-bandgap base GaAs/AlGaAs HBTs
Abstract
Equivalent circuit parameters of graded-bandgap base GaAs/AlGaAs heterojunction bipolar transistors are derived by analyzing static and microwave characteristics. Here, the estimated base transit time of 1.4 ps indicates that the average electron velocity is enhanced under the built-in field of the graded base. Additionally, ECL ring oscillators are simulated using the obtained parameters. The simulated propagation delay time of ECL gates agrees well with an experimental result of as short as 65 ps/gate.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1986
- DOI:
- Bibcode:
- 1986ElL....22...18Y
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Energy Gaps (Solid State);
- Equivalent Circuits;
- Gallium Arsenides;
- Heterojunction Devices;
- Microwave Circuits;
- Oscillators;
- Transistor Logic;
- Digital Systems;
- Electrical Resistance;
- Gates (Circuits);
- Static Characteristics;
- Transit Time;
- Electronics and Electrical Engineering