Numerical modeling of nonstationary electron processes in n-p(+)-n bipolar heterotransistors

A kinetic approach is taken to the numerical modeling of the dynamics of electron processes in n-p(+)-n bipolar transistors with an emitter heterojunction. The approach, taking into account the features of the nonequilibrium electron system in the transistor, is based on the macroparticle method in which the scattering of electrons by impurities and phonons is described by the Monte Carlo method. Attention is given, in particular, to the frequency dependence of the transport coefficient modulus through the base and the collector efficiency modulus for GaAs and InAs devices.