Transient radiation effects in electronics
Abstract
Techniques for hardening military electronics components against transient radiation effects are discussed. A summary is presented of the main mechanisms of radiation damage in bipolar ICs, FETs, LEDs, and silicon controlled rectifiers. It is shown that the older NMOS and silicon devices are the least resistant to radiation effects. Selection of hard parts and damage-resistant circuit design approaches are recommended to minimize transient radiation effects and improve the overall survivability of military electronics systems. A table listing the major damage mechanisms in military electronics devices is provided.
- Publication:
-
Defense Science Electronics
- Pub Date:
- January 1986
- Bibcode:
- 1986DeScE...5...77R
- Keywords:
-
- Circuit Protection;
- Military Technology;
- Radiation Hardening;
- Transient Response;
- Bipolar Transistors;
- Diodes;
- Field Effect Transistors;
- Integrated Circuits;
- Radiation Damage;
- Silicon Controlled Rectifiers;
- Electronics and Electrical Engineering