Methods for the high-speed simulation of the electrical characteristics of MOS LSI circuits
Abstract
Novel approaches to the high-speed electrical analysis of MOS LSI circuits are outlined. Sufficient conditions of integration stability are obtained which permit an expansion of the existing class of test models; and a principle of local diagonalization is proposed which provides for the required local properties of relaxation-method convergence. A program for the computer-aided high-speed analysis of integrated circuits (AURUS) is proposed.
- Publication:
-
Avtometriia
- Pub Date:
- December 1986
- Bibcode:
- 1986Avtme........3L
- Keywords:
-
- Computer Techniques;
- Integrated Circuits;
- Large Scale Integration;
- Metal Oxide Semiconductors;
- Network Analysis;
- High Speed;
- Systems Simulation;
- Systems Stability;
- Electronics and Electrical Engineering